Theoretical and experimental analysis of radiative recombination lifetimes in nonpolar InGaN/GaN quantum dots

S Kanta Patra, T Wang, TJ Puchtler, Tongtong Zhu, Rachel Oliver, RA Taylor & S Schulz
We present here a combined experimental and theoretical analysis of the radiative recombination lifetime in a-plane (11math formula0) InGaN/GaN quantum dots. The structures have been grown by modified droplet epitaxy and time-resolved photoluminescence measurements have been performed to gain insight into the radiative lifetimes of these structures. This analysis is complemented by multi-band math formula calculations. To account for excitonic effects, the math formula theory is coupled with self-consistent Hartree calculations. Special attention is paid...
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