Oxygen Defect-Induced Metastability in Oxide Semiconductors Probed by Gate Pulse Spectroscopy

Sungsik Lee, Arokia Nathan, Sanghun Jeon & John Robertson
We investigate instability mechanisms in amorphous In-Ga-Zn-O transistors based on bias and illumination stress-recovery experiments coupled with analysis using stretched exponentials and inverse Laplace transform to retrieve the distribution of activation energies associated with metastable oxygen defects. Results show that the recovery process after illumination stress is persistently slow by virtue of defect states with a broad range, 0.85 eV to 1.38 eV, suggesting the presence of ionized oxygen vacancies and interstitials. We also rule out charge...
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