Muonium in BeO

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BeO is a promising material in order to improve HfO2-based MOSFET devices, and a candidate substitute of HfO2 as high-k gate material. The electrical properties of BeO can be highly affected by the usual and inevitable presence of hydrogen in high concentrations. However, the role of hydrogen in BeO is not well-known. Muonium can be used as an analogue of hydrogen. In this experiment we propose to use muonium as a model of hydrogen in...
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